1 radiation hardened 2.5v reference is-1009rh, is-1009eh the star*power tm radiation hardened is-1009rh, is-1009eh are a 2.5v shunt regulator diode is designed to provide a stable 2.5v reference over a wide current range. these devices are designed to maintain stability over the full military temperature range and over time. the 0.2% reference tolerance is achieved by on-chip trimming. an adjustment terminal is provided to allow for the calibration of system errors. the use of this terminal to adjust the reference voltage does not effect the temperature coefficient. constructed with the intersil dielectrically isolated ebhf process, these devices are immune to single event latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments. specifications for rad hard qml devices are controlled by the defense logistics agency land and maritime (dla). the smd numbers listed here must be used when ordering. detailed electrical specifications for these devices are contained in smd 5962-00523 . features ? electrically screened to smd # 5962-00523 ? qml qualified per mil-prf-38535 requirements ? eh version acceptance tested to 50krad(si) (ldr) ?radiation environment - high dose rate (50-300rad(si)/s). . . . . . . . . . . 300 krad(si) - low dose rate (0.01rad(si)/s) . . . . . . . . . . . . . . 50krad(si) - latch-up immune. . . . . . . . . . . . . . . . dielectrically isolated ? reverse breakdown voltage (v z ) . . . . . . . . . . . . . . . . . . . . 2.5v ?change in v z vs. current (400a to 10ma) . . . . . . . . . . . 6mv ?change in v z vs. temperature (-55c to +125c). . . . .15mv ? maximum reverse breakdown current . . . . . . . . . . . . . 20ma ? device is tested with 10f shunt capacitance connected from v+ to v-, which provides optimum stability ? interchangeable with 10 09 and 136 industry types applications ? power supply monitoring ? reference for 5v systems ? a/d and d/a reference pin configurations is2-1009rh, is2-1009eh (to-206ab can) bottom view isye-1009rh, isye-1009eh (smd.5) bottom view 2 1 3 v- v+ adj 1 2 3 adj v- v+ september 12, 2013 fn4780.6 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 1-888-468-3774 | copyright intersil americas llc 2000, 2006, 2011, 2013. all rights reserved intersil (and design) and star*power are trademarks owned by intersil corporation or one of its subsidiaries. all other trademarks mentioned are the property of their respective owners.
is-1009rh, is-1009eh 2 fn4780.6 september 12, 2013 ordering information ordering smd number (note 2) internal mkt. number (note 1) part marking (pb-free) temp. range (c) 5962f0052301vxc is2-1009rh-q f00523v -55 to +125 5962f0052301qxc is2-1009rh-8 f00523 01qxc q -55 to +125 5962f0052302vxc IS2-1009EH-Q f00523v -55 to +125 5962f0052301vyc isye-1009rh-q q 5962f00 52301vyc -55 to +125 5962f0052301qyc isye-1009rh-8 q 5962f00 52301qyc -55 to +125 5962f0052302vyc isye-1009eh-q q 5962f00 52302vyc -55 to +125 is2-1009rh/proto is2-1009rh/proto is2-1009rh/proto -55 to +125 isye-1009rh/proto isye-1009rh/proto isye-1009rh/proto -55 to +125 5962f0052301v9a is0-1009rh-q -55 to +125 is0-1009rh/sample is0-1009rh/sample -55 to +125 5962f0052302v9a is0-1009eh-q -55 to +125 notes: 1. these intersil pb-free hermetic packaged products employ 100% au plate - e4 termination finish, which is rohs compliant and compatible with both snpb and pb-free soldering operations. 2. specifications for rad hard qml devices are controlled by the defense logistics agency land and maritime (dla). the smd numbe rs listed in the ?ordering information? table on page 2 must be used when ordering.
is-1009rh, is-1009eh 3 intersil products are manufactured, assembled and tested utilizing iso9000 quality systems as noted in the quality certifications found at www.intersil.com/design/quality intersil products are sold by description only. intersil corporat ion reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is believed to be accurate and reliable. however, no responsi bility is assumed by intersil or its subsid iaries for its use; nor for any infringem ents of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of i ntersil or its subsidiaries. for information regarding intersil corporation and its products, see www.intersil.com fn4780.6 september 12, 2013 for additional products, see www.intersil.com/product_tree die characteristics die dimensions 1270 m x 1778 m (50 mils x 70 mils) thickness: 356 m 25.4 m (14 mils 1 mil) interface materials glassivation type: nitride (si 3 n 4 ) nitride thickness: 4.0k ? 1.0k ? top metallization type: alsicu thickness: 16.0k ? 2k ? substrate ebhf, dielectric isolation backside finish silicon assembly related information substrate potential unbiased (di) additional information worst case current density <1.0 x 10 5 a/cm 2 transistor count 26 metallization mask layout is-1009rh, is-1009eh adj v- v+
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